Back to Search Start Over

Nitrogen-doped hollow carbon spheres synthesized from solid precursor and its application in lithium ions batteries.

Authors :
Tang, Yihua
Wang, Xiao
Chen, Jingjing
Wang, Xinxin
Wang, Dajian
Mao, Zhiyong
Source :
Journal of Alloys & Compounds. Mar2021, Vol. 858, pN.PAG-N.PAG. 1p.
Publication Year :
2021

Abstract

Hollow carbon spheres (HCSs) materials have been investigated extensively for various applications in energy storage, catalysis, electrochemical conversion. At present, template method using liquid or gaseous carbon sources is the dominant synthetic route for HCSs. Herein, HCSs with high nitrogen doping levels are synthesized by employing graphitic carbon nitride (g-C 3 N 4) solid precursor as carbon and nitrogen sources with the presence of Zn templates. The successful synthesis of N-doped HCSs using solid g-C 3 N 4 precursor is confirmed by a series of characterization technologies. Serving as the anode materials in lithium ions batteries, promising lithium ions storage performances are obtained for the resultant N-doped HCSs. Brilliant specific capacities of 1506.6 mAh g−1 at 0.1 A g−1 and 519.2 mAh g−1 at 5 A g−1 are recorded after 360 cycles. The promising lithium ion storage performances of the N-doped HCSs are ascribed to the unique hollow structure with large surface area, suitable nitrogen doping level and large inner pore volume. The presented work provides a new route to synthesize HCSs or heteroatoms doped HCSs materials using solid carbon sources. • N-doped HCSs was synthesized using solid precursor with presence of Zn template. • Tunable N-doping levels from 21.47 to 33.32 at.% were realized for N-doped HCSs. • The Zn template was revealed to play the extra role of reduction denitrogenation. • N-doped HCSs delivers high specific capacity of 1506.6 mAh g−1 as LIBs anode. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09258388
Volume :
858
Database :
Academic Search Index
Journal :
Journal of Alloys & Compounds
Publication Type :
Academic Journal
Accession number :
148364961
Full Text :
https://doi.org/10.1016/j.jallcom.2020.157720