Realization of red electroluminescence from Ga2O3:Eu/Si based light-emitting diodes.

Eu doped Ga 2 O 3 film has been grown on n -Si (111) substrate by pulsed laser deposition. Excellent structural and optical properties of the obtained Ga 2 O 3 :Eu film have been confirmed by X-ray diffraction, Raman and photoluminescence measurements. Subsequently, Ga 2 O 3 :Eu/ n -Si based light-emitting diode was successfully fabricated with a multilayer structure of ITO/Ga 2 O 3 :Eu/ n -Si/Au. Intense red electroluminescence peaking at 615 nm has been observed at room temperature by naked eyes from the fabricated device when a positive bias voltage is applied on the n -Si substrate. The current-voltage characteristics and electroluminescence spectra indicate that the Ga 2 O 3 :Eu/ n -Si based light-emitting diode has a rather low driven voltage of ~7.9 V. The origin of the Eu-related electroluminescence has been clarified to originate from the defect-assisted energy transfer from Ga 2 O 3 host to Eu3+ ions. We believe that this study will offer the possibility to develop the silicon-compatible full-color displays or lighting technology using Ga 2 O 3 as host material. • Eu doped β- Ga 2 O 3 film was deposited on n -Si substrate by pulsed laser deposition. • Red light-emitting diode was fabricated based on Ga 2 O 3 :Eu/ n -Si heterostructure. • Intense red electroluminescence at 615 nm was achieved from the diode with a low driven voltage of 7.9 V. • The electroluminescence mechanism of Ga 2 O 3 :Eu/ n -Si based diode was investigated. [ABSTRACT FROM AUTHOR]