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Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer.
- Source :
-
Physica Status Solidi. A: Applications & Materials Science . Feb2021, Vol. 218 Issue 3, p1-1. 1p. - Publication Year :
- 2021
-
Abstract
- Monolithic Integrated AlGaN/GaN Power Converter Topologies on High-Voltage AlN/GaN Superlattice Buffer B Semiconductor Superlattices b The picture shows a monolithic power converter, fabricated in a lateral AlGaN/GaN-on-Si process on an improved AlN/GaN super-lattice buffer epitaxy. The super-lattice reduces vertical leakage and back-gating effects compared to step-graded buffers. [Extracted from the article]
- Subjects :
- *GENERATIVE adversarial networks
*TOPOLOGY
*EPITAXY
Subjects
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 218
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 148477618
- Full Text :
- https://doi.org/10.1002/pssa.202000404