Back to Search Start Over

Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer.

Authors :
Moench, Stefan
Müller, Stefan
Reiner, Richard
Waltereit, Patrick
Czap, Heiko
Basler, Michael
Hückelheim, Jan
Kirste, Lutz
Kallfass, Ingmar
Quay, Rüdiger
Ambacher, Oliver
Source :
Physica Status Solidi. A: Applications & Materials Science. Feb2021, Vol. 218 Issue 3, p1-1. 1p.
Publication Year :
2021

Abstract

Monolithic Integrated AlGaN/GaN Power Converter Topologies on High-Voltage AlN/GaN Superlattice Buffer B Semiconductor Superlattices b The picture shows a monolithic power converter, fabricated in a lateral AlGaN/GaN-on-Si process on an improved AlN/GaN super-lattice buffer epitaxy. The super-lattice reduces vertical leakage and back-gating effects compared to step-graded buffers. [Extracted from the article]

Details

Language :
English
ISSN :
18626300
Volume :
218
Issue :
3
Database :
Academic Search Index
Journal :
Physica Status Solidi. A: Applications & Materials Science
Publication Type :
Academic Journal
Accession number :
148477618
Full Text :
https://doi.org/10.1002/pssa.202000404