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Ar plasma-assisted P-doped Ni3S2 with S vacancies for efficient electrocatalytic water splitting.
- Source :
-
Dalton Transactions: An International Journal of Inorganic Chemistry . 2/14/2021, Vol. 50 Issue 6, p2007-2013. 7p. - Publication Year :
- 2021
-
Abstract
- Doping engineering is considered an effective way to improve the electrocatalytic water splitting performance of catalysts. In this paper, P-doped Ni3S2/NF was prepared by Ar plasma-assisted chemical vapor deposition, where the P dopant was efficiently introduced into Ni3S2/NF under the assistance of Ar plasma. Meanwhile, numerous vacancies were generated due to plasma bombardment. In the doping process, the P dopants replace the S vacancies, which contributes to the strong bonding between the P dopants and Ni3S2. Due to the synergistic effect of the P dopants and S vacancies, the Sv-Ni3S2−xPx-4 catalyst has low HER and OER overpotentials of 89 mV and 216 mV at 10 mA cm−2, with a lower impedance value and good stability. The present work shows a facile route to introduce dopants and vacancies into catalyst materials for adding active sites, eventually improving their electrocatalytic performance. [ABSTRACT FROM AUTHOR]
- Subjects :
- *CHEMICAL vapor deposition
*HYDROGEN evolution reactions
*PHOSPHORUS in water
Subjects
Details
- Language :
- English
- ISSN :
- 14779226
- Volume :
- 50
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Dalton Transactions: An International Journal of Inorganic Chemistry
- Publication Type :
- Academic Journal
- Accession number :
- 148745353
- Full Text :
- https://doi.org/10.1039/d0dt03711g