Cite
Investigating the Reasons for the Difficult Erase Operation of a Charge‐Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin‐Film Channel Layers.
MLA
Kim, Jun Shik, et al. “Investigating the Reasons for the Difficult Erase Operation of a Charge‐Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin‐Film Channel Layers.” Physica Status Solidi - Rapid Research Letters, vol. 15, no. 2, Feb. 2021, pp. 1–7. EBSCOhost, https://doi.org/10.1002/pssr.202000549.
APA
Kim, J. S., Kang, S., Jang, Y., Lee, Y., Kim, K., Kim, W., Lee, W., & Hwang, C. S. (2021). Investigating the Reasons for the Difficult Erase Operation of a Charge‐Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin‐Film Channel Layers. Physica Status Solidi - Rapid Research Letters, 15(2), 1–7. https://doi.org/10.1002/pssr.202000549
Chicago
Kim, Jun Shik, Sukin Kang, Younjin Jang, Yonghee Lee, Kwangmin Kim, Whayoung Kim, Woongkyu Lee, and Cheol Seong Hwang. 2021. “Investigating the Reasons for the Difficult Erase Operation of a Charge‐Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin‐Film Channel Layers.” Physica Status Solidi - Rapid Research Letters 15 (2): 1–7. doi:10.1002/pssr.202000549.