Surface‐activating‐bonding‐based low‐resistance Si/III‐V junctions.

MLA

Liang, J., et al. “Surface‐activating‐bonding‐based Low‐resistance Si/III‐V Junctions.” Electronics Letters (Wiley-Blackwell), vol. 49, no. 12, June 2013, pp. 830–32. EBSCOhost, https://doi.org/10.1049/el.2013.1553.

APA

Liang, J., Nishida, S., Morimoto, M., & Shigekawa, N. (2013). Surface‐activating‐bonding‐based low‐resistance Si/III‐V junctions. Electronics Letters (Wiley-Blackwell), 49(12), 830–832. https://doi.org/10.1049/el.2013.1553

Chicago

Liang, J., S. Nishida, M. Morimoto, and N. Shigekawa. 2013. “Surface‐activating‐bonding‐based Low‐resistance Si/III‐V Junctions.” Electronics Letters (Wiley-Blackwell) 49 (12): 830–32. doi:10.1049/el.2013.1553.