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Information Density in Multi-Layer Resistive Memories.
- Source :
-
IEEE Transactions on Information Theory . Mar2021, Vol. 67 Issue 32, p1446-1460. 15p. - Publication Year :
- 2021
-
Abstract
- Resistive memories store information in a crossbar arrangement of two-terminal devices that can be programmed to patterns of high or low resistance. While extremely compact, this technology suffers from the “sneak-path” problem: certain information patterns cannot be recovered, as multiple low resistances in parallel make a high resistance indistinguishable from a low resistance. In this paper, a multi-layer device is considered, and the number of bits it can store is derived exactly and asymptotic bounds are developed. The information density of a series of isolated arrays with extreme aspect ratios is derived in the single- and multi-layer cases with and without peripheral selection circuitry. This density is shown to be non-zero in the limit, unlike that of the arrays with moderate aspect ratios previously considered. A simple encoding scheme that achieves capacity asymptotically is presented. [ABSTRACT FROM AUTHOR]
- Subjects :
- *COMBINATORICS
*INFORMATION theory
*COMPUTER architecture
*COMPUTER storage devices
Subjects
Details
- Language :
- English
- ISSN :
- 00189448
- Volume :
- 67
- Issue :
- 32
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Information Theory
- Publication Type :
- Academic Journal
- Accession number :
- 148822578
- Full Text :
- https://doi.org/10.1109/TIT.2020.3040255