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High selective gas sensors based on surface modified polymer transistor.

Authors :
Song, Ruxin
Zhou, Xu
Wang, Zi
Zhu, Lunan
Lu, Jie
Xue, Di
Wang, Zhifang
Huang, Lizhen
Chi, Lifeng
Source :
Organic Electronics. Apr2021, Vol. 91, pN.PAG-N.PAG. 1p.
Publication Year :
2021

Abstract

Gas sensors based on organic field effect transistors have attracted great attentions and achieved much progress because of their inherent merits such as low-cost, room operating temperature, good portability and flexibility. However, high sensitivity and good selectivity are still challenging issues blocking their further development. Herein, we demonstrate a promising strategy for fabricating high selective organic gas sensors through introducing surface modification. Modified substrate with different self-assembling monolayers (SAMs), the sensing properties of polymer OFET gas sensors are varied with terminal group attached on the SAM. The bare device shows significant sensitive to NH 3 , while it becomes much more sensitive to NO 2 if a fluorine substituent SAM adopted. The NH 2 -terminal SAM and CH 3 -terminal SAM bring moderate sensitivity to gases like NH 3 and NO 2. Those various sensitivity and device parameter evolution are promising to generate a patterning recognition for different gases, which may provide a potential promising approach for improving selectivity of organic gas sensors. Image 1 • Polymer transistors with varied performance was achieved based on a series of SAM modification. • Gas sensitivities to several gases ranging from oxidative to reductive are critically dependent on the end group of SAM molecules. • Polymer transistor with F-SAM present a high sensitivity up to 780% to NO 2. • Multiple parameter variations based on the series of devices provide a potential pattern recognition to discriminate gases. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
15661199
Volume :
91
Database :
Academic Search Index
Journal :
Organic Electronics
Publication Type :
Academic Journal
Accession number :
148866626
Full Text :
https://doi.org/10.1016/j.orgel.2021.106083