Cite
Low noise Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes on InP substrates.
MLA
Lee, S., et al. “Low Noise Al0.85Ga0.15As0.56Sb0.44 Avalanche Photodiodes on InP Substrates.” Applied Physics Letters, vol. 118, no. 8, Feb. 2021, pp. 1–5. EBSCOhost, https://doi.org/10.1063/5.0035571.
APA
Lee, S., Kodati, S. H., Guo, B., Jones, A. H., Schwartz, M., Winslow, M., Grein, C. H., Ronningen, T. J., Campbell, J. C., & Krishna, S. (2021). Low noise Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes on InP substrates. Applied Physics Letters, 118(8), 1–5. https://doi.org/10.1063/5.0035571
Chicago
Lee, S., S. H. Kodati, B. Guo, A. H. Jones, M. Schwartz, M. Winslow, C. H. Grein, T. J. Ronningen, J. C. Campbell, and S. Krishna. 2021. “Low Noise Al0.85Ga0.15As0.56Sb0.44 Avalanche Photodiodes on InP Substrates.” Applied Physics Letters 118 (8): 1–5. doi:10.1063/5.0035571.