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Three Orders of Reverse Leakage Reduction by Using Supercritical CO2 Nitriding Process on GaN Quasi-Vertical Schottky Barrier Diode.
- Source :
-
IEEE Transactions on Electron Devices . Jan2021, Vol. 68 Issue 1, p197-201. 5p. - Publication Year :
- 2021
-
Abstract
- Surface treatment is quite vital to reduce the reverse leakage current and improve the current On–Off ratio of gallium nitride (GaN) quasi-vertical Schottky barrier diode (SBD). In this work, we report a new nondestructive low temperature supercritical CO2 fluid (SCF) nitridation technology to treat the surface of GaN and substantially reduce the leakage current of GaN quasi-vertical SBD. The X-ray photoelectron spectroscopy (XPS) reveals the increased nitriding degree and oxygen doping degree in the form of GaOx after the SCF process results in the leakage performance improvement. As a result, the defects at metal/semiconductor interface are passivated. Also, because of NH-2 and OH− generated from the SCF process, the surface peak electric field of n−GaN decreases, and thus the breakdown voltage is enhanced. The reverse leakage current density is reduced by more than three orders of magnitude from 3.7 × 10−6 to 3.52 × 10−9 A/cm2 (at −3 V) and the ON-/ OFF-current ratio is improved by three orders from 8 × 107 to 5.74 × 1010. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 68
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 148948933
- Full Text :
- https://doi.org/10.1109/TED.2020.3039476