Burstein-Moss shift in impurity-compensated bulk Ga1-xInxSb substrates.

The optical and electrical properties of tellurium- (Te) compensated Ga1-xInxSb bulk crystals with alloy compositions ranging from x=0.37 to x=0.98 have been investigated. It has been observed that the Burstein-Moss shift plays an important role in the optical properties of Ga1-xInxSb crystals for the alloy compositions greater than x=0.5 and net donor concentrations in the 2.9×1017 to 2.6×1018 cm-3 range at 300 K. A good agreement has been obtained between the theory and experimental observations. Furthermore, electrical characterizations at 300 and 77 K show that Te compensates the native defects in Ga1-xInxSb, irrespective of the alloy composition. [ABSTRACT FROM AUTHOR]