Cite
Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy.
MLA
Puurunen, Riikka L., et al. “Island Growth in the Atomic Layer Deposition of Zirconium Oxide and Aluminum Oxide on Hydrogen-Terminated Silicon: Growth Mode Modeling and Transmission Electron Microscopy.” Journal of Applied Physics, vol. 96, no. 9, Nov. 2004, pp. 4878–89. EBSCOhost, https://doi.org/10.1063/1.1787624.
APA
Puurunen, R. L., Vandervorst, W., Besling, W. F. A., Richard, O., Bender, H., Conard, T., Chao Zhao, Delabie, A., Caymax, M., De Gendt, S., Heyns, M., Viitanen, M. M., de Ridder, M., Brongersma, H. H., Tamminga, Y., Thuy Dao, de Win, T., Verheijen, M., Kaiser, M., & Tuominen, M. (2004). Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy. Journal of Applied Physics, 96(9), 4878–4889. https://doi.org/10.1063/1.1787624
Chicago
Puurunen, Riikka L., Wilfried Vandervorst, Wim F. A. Besling, Olivier Richard, Hugo Bender, Thierry Conard, Chao Zhao, et al. 2004. “Island Growth in the Atomic Layer Deposition of Zirconium Oxide and Aluminum Oxide on Hydrogen-Terminated Silicon: Growth Mode Modeling and Transmission Electron Microscopy.” Journal of Applied Physics 96 (9): 4878–89. doi:10.1063/1.1787624.