Re-Assessment of Steep-Slope Device Design From a Circuit-Level Perspective Using Novel Evaluation Criteria and Model-Less Method.

Power is becoming a major bottleneck in energy constraint applications such as internet-of-things (IoT). Emerging steep-slope devices such as tunnel FETs (TFET) and negative capacitance (NC) FETs are promising candidates for such type of applications. Nevertheless, due to the time-consuming characterization process and inconsistent evaluation criteria, conventional co-design and co-optimization process between novel devices and logic circuits takes too much time and its results rarely meet expectation. As a result, conventional co-design and co-optimization are quite inefficient. In this paper, for the first time, a new criterion is utilized to evaluate novel steep-slope devices for ultra-low power applications. In addition, an efficient evaluation method is proposed, which not only quantitatively guides device design, but also evaluates devices from a circuit perspective without the need for device compact model and circuit simulation. From a device design perspective, optimal design metrics of novel steep slope devices such as average subthreshold slope ($SS_{avg}$), off current (${I} _{OFF}$), and on current (${I} _{ON}$) can be directly figured out with the help of the proposed evaluation criteria and method. From a circuit design perspective, the proposed evaluation criteria and method can be used to determine application scope. [ABSTRACT FROM AUTHOR]