Cite
Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage.
MLA
Li, Panpan, et al. “Metalorganic Chemical Vapor Deposition Grown N-InGaN/n-GaN Tunnel Junctions for Micro-Light-Emitting Diodes with Very Low Forward Voltage.” Semiconductor Science & Technology, vol. 35, no. 12, Dec. 2020, pp. 1–5. EBSCOhost, https://doi.org/10.1088/1361-6641/abbd5b.
APA
Li, P., Zhang, H., Li, H., Zhang, Y., Yao, Y., Palmquist, N., Iza, M., Speck, J. S., Nakamura, S., & DenBaars, S. P. (2020). Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage. Semiconductor Science & Technology, 35(12), 1–5. https://doi.org/10.1088/1361-6641/abbd5b
Chicago
Li, Panpan, Haojun Zhang, Hongjian Li, Yuewei Zhang, Yifan Yao, Nathan Palmquist, Mike Iza, James S Speck, Shuji Nakamura, and Steven P DenBaars. 2020. “Metalorganic Chemical Vapor Deposition Grown N-InGaN/n-GaN Tunnel Junctions for Micro-Light-Emitting Diodes with Very Low Forward Voltage.” Semiconductor Science & Technology 35 (12): 1–5. doi:10.1088/1361-6641/abbd5b.