1 MeV electron and 10 MeV proton irradiation effects on inverted metamorphic GaInP/GaAs/InGaAs triple junction solar cell.

The degradation characteristic of GaInP/GaAs/In 0.3 Ga 0.7 As inverted metamorphic (IMM) triple junction solar cells irradiated by 1 MeV electron and 10 MeV proton have been studied and compared to that of traditional GaInP/InGaAs/Ge lattice matched (LM) triple junction solar cells. Both IMM and LM solar cells exhibited very good radiation resistance upon 3.16 × 1010 MeV/g displacement damage dose electron and proton irradiation level. The remaining factor of maximum output power is 0.86 and 0.85 for electron irradiation and 0.73 and 0.75 for proton irradiation in IMM and LM solar cells, respectively. IMM solar cell showed better properties in current matching in end-of-life condition comparing to that of LM solar cells. 1 MeV electron to 10 MeV proton irradiation relative damage coefficients, R e p , for IMM and LM solar cells are determined as 3.11 and 2.78, respectively, by using equivalent displacement damage dose model. The radiation damage coefficient of diffusion length upon 1 MeV electron and 10 MeV proton irradiation for both types of solar cell structures have been calculated. • GaInP/GaAs/InGaAs IMM solar cell are studied upon electron and proton irradiation. • Degradation of characteristics of IMM solar cell are compared to LM solar cell. • IMM solar cell showed better properties in current matching in EOL condition. • Relative damage coefficient for electron to proton irradiation have been calculated. • Radiation damage coefficient for minority carrier diffusion length are calculated. [ABSTRACT FROM AUTHOR]