Contact‐Barrier Free, High Mobility, Dual‐Gated Junctionless Transistor Using Tellurium Nanowire.

MLA

Dasika, Pushkar, et al. “Contact‐Barrier Free, High Mobility, Dual‐Gated Junctionless Transistor Using Tellurium Nanowire.” Advanced Functional Materials, vol. 31, no. 13, Mar. 2021, pp. 1–9. EBSCOhost, https://doi.org/10.1002/adfm.202006278.

APA

Dasika, P., Samantaray, D., Murali, K., Abraham, N., Watanbe, K., Taniguchi, T., Ravishankar, N., & Majumdar, K. (2021). Contact‐Barrier Free, High Mobility, Dual‐Gated Junctionless Transistor Using Tellurium Nanowire. Advanced Functional Materials, 31(13), 1–9. https://doi.org/10.1002/adfm.202006278

Chicago

Dasika, Pushkar, Debadarshini Samantaray, Krishna Murali, Nithin Abraham, Kenji Watanbe, Takashi Taniguchi, N Ravishankar, and Kausik Majumdar. 2021. “Contact‐Barrier Free, High Mobility, Dual‐Gated Junctionless Transistor Using Tellurium Nanowire.” Advanced Functional Materials 31 (13): 1–9. doi:10.1002/adfm.202006278.