Cite
An ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits.
MLA
Huang, Sen, et al. “An Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for the Fabrication and Integration of GaN-Based Power Devices and Power-Driven Circuits.” Semiconductor Science & Technology, vol. 36, no. 4, Apr. 2021, pp. 1–12. EBSCOhost, https://doi.org/10.1088/1361-6641/abd2fe.
APA
Huang, S., Wang, X., Liu, X., Sun, Q., & Chen, K. J. (2021). An ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits. Semiconductor Science & Technology, 36(4), 1–12. https://doi.org/10.1088/1361-6641/abd2fe
Chicago
Huang, Sen, Xinhua Wang, Xinyu Liu, Qian Sun, and Kevin J Chen. 2021. “An Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for the Fabrication and Integration of GaN-Based Power Devices and Power-Driven Circuits.” Semiconductor Science & Technology 36 (4): 1–12. doi:10.1088/1361-6641/abd2fe.