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Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length.
- Source :
-
IEEE Transactions on Electron Devices . Mar2021, Vol. 68 Issue 3, p1050-1056. 7p. - Publication Year :
- 2021
-
Abstract
- We investigate the effect of channel layer thickness on effective mobility (μeff) in the sub-10-nm regime of amorphous indium–gallium–zinc–oxide thin-film transistors (α-IGZO TFTs). TFT devices with extremely scaled channel thickness tα-IGZO of 3.6 nm were realized, exhibiting low subthreshold swing (SS) of 74.4 mV/decade and the highest effective mobility μeff of 34 cm2/V ⋅ s at a carrier density NCarrier of ~ 5 × 1012 cm−2 for any kind of α-IGZO TFTs having sub-10-nm tα-IGZO. No significant degradation of μeff is observed as α-IGZO thickness reduced from 6 to 3.6 nm. By scaling down the channel length LCH to 38 nm, high extrinsic transconductance (Gm, max) of 125 μs/μm (at VDS of 1 V) and ON-state current ION of 350 μA/μm at VGS – VT of 3 V with VDS of 2.5 V are achieved. [ABSTRACT FROM AUTHOR]
- Subjects :
- *TRANSISTORS
*THIN film transistors
*CARRIER density
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 68
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 149616110
- Full Text :
- https://doi.org/10.1109/TED.2020.3048920