Advances in the modification and device integration of multiferroic bismuth ferrite.

As a single-phase multiferroic oxide, BiFeO3 (BFO) is suitable for applications such as magnetoelectric memories, sensors and actuators. However, BFO suffers from high leakage current density and small magnetization. And the BFO in film form is apt to react with Pt bottom electrode during the thermal treatment. In addition, its required high processing temperatures can not be compatible well with the interconnect technologies for semiconductor. In this review, we summarize both the improvement in leakage characteristics and enhancement of magnetic properties of BFO. The effects of buffer layers on properties and device integration of BFO thin films are also introduced. [ABSTRACT FROM AUTHOR]