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Intrinsic Semiconducting Behavior in a Large Mixed‐Valent Uranium(V/VI) Cluster.

Authors :
Zhang, Mingxing
Liang, Chengyu
Cheng, Guo‐Dong
Chen, Junchang
Wang, Yumin
He, Linwei
Cheng, Liwei
Gong, Shicheng
Zhang, Duo
Li, Jiong
Hu, Shu‐Xian
Diwu, Juan
Wu, Guozhong
Wang, Yaxing
Chai, Zhifang
Wang, Shuao
Source :
Angewandte Chemie International Edition. 4/26/2021, Vol. 60 Issue 18, p9886-9890. 5p.
Publication Year :
2021

Abstract

We disclose the intrinsic semiconducting properties of one of the largest mixed‐valent uranium clusters, [H3O+][UV(UVIO2)8(μ3‐O)6(PhCOO)2(Py(CH2O)2)4(DMF)4] (Ph=phenyl, Py=pyridyl, DMF=N,N‐dimethylformamide) (1). Single‐crystal X‐ray crystallography demonstrates that UV center is stabilized within a tetraoxo core surrounded by eight uranyl(VI) pentagonal bipyramidal centers. The oxidation states of uranium are substantiated by spectroscopic data and magnetic susceptibility measurement. Electronic spectroscopy and theory corroborate that UV species serve as electron donors and thus facilitate 1 being a n‐type semiconductor. With the largest effective atomic number among all reported radiation‐detection semiconductor materials, charge transport properties and photoconductivity were investigated under X‐ray excitation for 1: a large on‐off ratio of 500 and considerable charge mobility lifetime product of 2.3×10−4 cm2 V−1, as well as a high detection sensitivity of 23.4 μC Gyair−1 cm−2. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
14337851
Volume :
60
Issue :
18
Database :
Academic Search Index
Journal :
Angewandte Chemie International Edition
Publication Type :
Academic Journal
Accession number :
149959633
Full Text :
https://doi.org/10.1002/anie.202017298