Cite
Fin-shaped AlGaN/GaN high electron mobility magnetoresistive sensor device.
MLA
Xia, Lingxi, et al. “Fin-Shaped AlGaN/GaN High Electron Mobility Magnetoresistive Sensor Device.” Applied Physics Letters, vol. 118, no. 16, Apr. 2021, pp. 1–5. EBSCOhost, https://doi.org/10.1063/5.0046684.
APA
Xia, L., Ren, K., Huang, C.-F., & Liang, Y. C. (2021). Fin-shaped AlGaN/GaN high electron mobility magnetoresistive sensor device. Applied Physics Letters, 118(16), 1–5. https://doi.org/10.1063/5.0046684
Chicago
Xia, Lingxi, Kailin Ren, Chih-Fang Huang, and Yung C. Liang. 2021. “Fin-Shaped AlGaN/GaN High Electron Mobility Magnetoresistive Sensor Device.” Applied Physics Letters 118 (16): 1–5. doi:10.1063/5.0046684.