AlGaN-based UV-B laser diode with a high optical confinement factor.

MLA

Tanaka, Shunya, et al. “AlGaN-Based UV-B Laser Diode with a High Optical Confinement Factor.” Applied Physics Letters, vol. 118, no. 16, Apr. 2021, pp. 1–6. EBSCOhost, https://doi.org/10.1063/5.0046224.

APA

Tanaka, S., Ogino, Y., Yamada, K., Omori, T., Ogura, R., Teramura, S., Shimokawa, M., Ishizuka, S., Yabutani, A., Iwayama, S., Sato, K., Miyake, H., Iwaya, M., Takeuchi, T., Kamiyama, S., & Akasaki, I. (2021). AlGaN-based UV-B laser diode with a high optical confinement factor. Applied Physics Letters, 118(16), 1–6. https://doi.org/10.1063/5.0046224

Chicago

Tanaka, Shunya, Yuya Ogino, Kazuki Yamada, Tomoya Omori, Reo Ogura, Shohei Teramura, Moe Shimokawa, et al. 2021. “AlGaN-Based UV-B Laser Diode with a High Optical Confinement Factor.” Applied Physics Letters 118 (16): 1–6. doi:10.1063/5.0046224.