Hole injection of quantum dot light-emitting diodes facilitated by multilayered hole transport layer.

[Display omitted] • Multilayered HTL constructed by inserting thin MoO 3 into an organic layer. • Multilayered HTL exhibits high hole conductivity compared to monostructured HTL. • The QLEDs with multilayered HTL exhibited enhanced efficiency and lifetime. • Multilayered HTL denoted high electrical stability with 15 times enhanced lifetime. We report a multilayered hole transport layer (HTL) structure to improve the efficiencies and lifetimes of quantum dot light-emitting diodes (QD-LEDs). The HTL structure was constructed by inserting molybdenum trioxide (MoO 3) into an organic monolayer to enhance its hole conductivity. We then investigated the effects of the multilayered HTL on the performance and operating lifetimes of QD-LEDs. QD-LEDs with optimal HTL exhibit power efficiency, external quantum efficiency, and lifetime (T 80) of 10.19 lm/W, 9.66%, and 336 h, respectively. Compared to the monolayer structure, the lifetime of the multilayered HTL was enhanced by a factor of 15. This novel architecture for QD-LEDs with multilayered HTL offers a new design strategy for next-generation high-efficiency QLED displays and solid-state lighting technologies. [ABSTRACT FROM AUTHOR]