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Mapping the Spatial Dependence of Charge-Collection Efficiency in Semiconductor Devices Using Pulsed-Laser Testing.
- Source :
-
IEEE Transactions on Nuclear Science . May2021, Vol. 68 Issue 5, p617-625. 9p. - Publication Year :
- 2021
-
Abstract
- By scanning the charge-deposition profile produced by a pulsed laser throughout a device, the spatially dependent charge-collection efficiency (CCE) can be determined. This is demonstrated by extracting the depth-dependent CCE in two photodiodes. The resulting collection efficiency curves are found to be consistent with their device structures and the expected charge-collection mechanisms. By applying the efficiency curves to the charge-deposition curves for both heavy ions and pulsed X-rays, the calculated collected charge values show very good agreement with experimental results. This suggests that the profiles extracted using the laser can help predict charge-collection data from other excitation sources and could improve modeling efforts by determining sensitive volumes. [ABSTRACT FROM AUTHOR]
- Subjects :
- *PULSED lasers
*LINEAR energy transfer
*HEAVY ions
*SEMICONDUCTOR devices
Subjects
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 68
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 150449119
- Full Text :
- https://doi.org/10.1109/TNS.2021.3049651