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Non-polar true-lateral GaN power diodes on foreign substrates.
- Source :
-
Applied Physics Letters . 6/7/2021, Vol. 118 Issue 21, p1-5. 5p. - Publication Year :
- 2021
-
Abstract
- We have demonstrated non-polar GaN power diodes (Schottky barrier diode and p–n junction diode) on foreign substrates featuring the true-lateral p–n and metal–semiconductor junctions. The diodes were fabricated on GaN islands laterally overgrown on the mask-patterned sapphire and Si substrates by metalorganic vapor phase epitaxy. The anode and cathode were formed on the opposed a-plane sidewalls of the island, making the device architecture essentially like the 90° rotation of the desired true-vertical power diodes. The ideality factor of the Schottky barrier diode remained 1.0 (from 1.00 to 1.05) over 7 decades in current. Specifically, a high critical electric field of 3.3 MV/cm was demonstrated on the p–n junction diode with avalanche capability. These performances reveal a strong potential of non-polar GaN with the true-lateral junctions for high power applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 118
- Issue :
- 21
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 150575187
- Full Text :
- https://doi.org/10.1063/5.0051552