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Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment.
- Source :
-
Applied Physics Letters . 6/14/2021, Vol. 118 Issue 22, p1-5. 5p. - Publication Year :
- 2021
-
Abstract
- Improving the contact characteristics of Ti/Al/Ni/Au on plasma etched n-AlGaN has been attempted by an active pretreatment, which can provide Si and N atoms to occupy the possible metal and N vacancies. It is found that the contacts on both the as-grown and plasma-etched + pretreatment n-Al0.5Ga0.5N present truly Ohmic in nature, whereas the contacts on plasma-etched samples without pretreatment still remain rectifying. Surface atomic concentration analysis indicates that the plasma etching induced N or metal vacancies mostly act as acceptor-like states, leading to a severe compensation. Fortunately, these states can be effectively removed by the presently proposed pretreatment, and thus the Fermi level is raised up toward the conduction band edge, ensuring the formation of Ohmic contacts. [ABSTRACT FROM AUTHOR]
- Subjects :
- *OHMIC contacts
*PLASMA etching
*SURFACE preparation
*CONDUCTION bands
*FERMI level
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 118
- Issue :
- 22
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 150709494
- Full Text :
- https://doi.org/10.1063/5.0042621