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Solution-processed amorphous p-type Cu-Sn-I thin films for transparent Cu-Sn-I/IGZO p–n junctions.
- Source :
-
Applied Physics Letters . 6/14/2021, Vol. 118 Issue 22, p1-5. 5p. - Publication Year :
- 2021
-
Abstract
- P-type Cu-Sn-I thin films with different Sn contents (CSn) were fabricated in air via a simple and low-cost spin-coating method. Sn additive facilitates the amorphization of CuI, and a complete amorphous phase of Cu-Sn-I film is achieved at CSn =15%. With increasing CSn, the optical bandgap increases and refractive index decreases, probably due to the influence of Sn-additive on both the electronic structure and phase state of the films. The air-processed Sn-free CuI films show p-type conduction with hole mobility and a concentration of 17.3 cm2/V−1 s−1 and 1.1 × 1019 cm−3, and an increasing trend of resistivity is observed along with a large drop in hole concentration during the Sn-inspired amorphization process. Moreover, transparent Cu-Sn-I/IGZO p–n junctions were constructed, exhibiting the optimum rectifying characteristic at CSn = 15% with a forward-to-reverse ratio of 6.2 × 103. [ABSTRACT FROM AUTHOR]
- Subjects :
- *THIN films
*HOLE mobility
*AMORPHIZATION
*ELECTRONIC structure
*REFRACTIVE index
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 118
- Issue :
- 22
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 150709500
- Full Text :
- https://doi.org/10.1063/5.0051631