Cite
Using a CdS under-layer to suppress charge carrier recombination at the Ag2S/FTO interface.
MLA
Chen, Hong, et al. “Using a CdS Under-Layer to Suppress Charge Carrier Recombination at the Ag2S/FTO Interface.” Journal of Alloys & Compounds, vol. 879, Oct. 2021, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.jallcom.2021.160348.
APA
Chen, H., Lei, Y., Yang, X., Zhao, C., & Zheng, Z. (2021). Using a CdS under-layer to suppress charge carrier recombination at the Ag2S/FTO interface. Journal of Alloys & Compounds, 879, N.PAG. https://doi.org/10.1016/j.jallcom.2021.160348
Chicago
Chen, Hong, Yan Lei, Xiaogang Yang, Chaoliang Zhao, and Zhi Zheng. 2021. “Using a CdS Under-Layer to Suppress Charge Carrier Recombination at the Ag2S/FTO Interface.” Journal of Alloys & Compounds 879 (October): N.PAG. doi:10.1016/j.jallcom.2021.160348.