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High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V.
- Source :
-
Physica Status Solidi - Rapid Research Letters . Jun2021, Vol. 15 Issue 6, p1-5. 5p. - Publication Year :
- 2021
-
Abstract
- Enhancement‐mode ultrawide‐bandgap Al0.65Ga0.35N/Al0.4Ga0.6N metal–insulator–semiconductor heterojunction field‐effect transistors are demonstrated using fluorine‐plasma treatment for threshold voltage control and Al2O3 as gate dielectric. The device exhibits a threshold voltage of 5 V, a maximum drain current density of 105 mA mm−1, and a transconductance of 19 mS mm−1. In addition, the capability to achieve low off‐state current density at 3–4 × 10−9 mA mm−1, an exceptionally low gate leakage current density of 1.4 × 10−8 mA mm−1 even at a high forward gate bias of VGS = 12 V, and a current on/off ratio >1010 is shown. Small signal measurement shows that the device has a unity current gain cutoff frequency fT of 3.8 GHz and power gain cutoff frequency fmax of 4.5 GHz. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626254
- Volume :
- 15
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi - Rapid Research Letters
- Publication Type :
- Academic Journal
- Accession number :
- 151003387
- Full Text :
- https://doi.org/10.1002/pssr.202000576