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Interface admittance measurement and simulation of dual gated CVD WS2 MOSCAPs: Mapping the DIT(E) profile.
- Source :
-
Solid-State Electronics . Sep2021, Vol. 183, pN.PAG-N.PAG. 1p. - Publication Year :
- 2021
-
Abstract
- • Dual gated WS 2 MOSCAP devices were fabricated to measure both n/p-branch C-V response. • Frequency/temperature dependent CV curves were correlated with WS 2 MOSCAP simulation. • Interface trap density across the bandgap (D IT (E)) is extracted for 2ML WS 2. Dual gated 2ML WS 2 MOS Capacitors have been fabricated with capacitance values as high as 2.7uF/cm2 (with single sheet charge centroid assumption for the WS 2 channel). Frequency and temperature dependent C-V measurements were correlated with simulations to extract the interface trap density-energy (D IT (E)) profile. We observe an exponentially decaying defect distribution from the conduction band (E C) edge with a magnitude of 8 × 1013 cm−2 eV−1 and an inverse slope of 0.12 eV and a similar distribution with a peak magnitude of 1.2 × 1014 cm−2 eV−1 from the valence band (E V) edge with an inverse slope of 0.12 eV. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 183
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 151171984
- Full Text :
- https://doi.org/10.1016/j.sse.2021.108035