Upgraded photosensitivity under the influence of Yb doped on V2O5 thin films as an interfacial layer in MIS type Schottky barrier diode as photodiode application.

In this study, rare earth ytterbium (Yb)-doped V 2 O 5 thin films were effectively coated on glass and Si substrates by the sol-gel method combined with the spin coating method. The films' structural, morphological, optical, and electrical properties were investigated through XRD, FESEM, UV-Vis, and I-V electrical conductivity. Doping on V 2 O 5 with low Yb content of 2, 4, and 6 ​wt % have highly affected the lattice, which is shown in tetragonal and orthorhombic structures. Morphological studies show nanorods like structured. The coated thin films yield bandgap of 3.23–3.31 ​eV. The electrical properties of Cu/Yb@V 2 O 5 /n-Si type Schottky barrier diode were studied, and calculated photodiode parameters like photosensitivity, photo-responsivity, external quantum efficiency, and detectivity. Predominantly, high photosensitivity of 5545.70% is obtained for the diode with 2 ​wt % Yb@V 2 O 5. [Display omitted] • Cu/Yb@V 2 O 5 /n-Si structured diodes are successfully fabricated. • Development of Yb@V 2 O 5 led to an increase of barrier height. • Optimum barrier height of 0.93 ​eV is obtained owing to Yb. • Yb@V 2 O 5 interface layer drawn high quantum efficiency of 37.90%. • Remarkably, 2 ​wt% Yb@V 2 O 5 is obtained high photosensitivity of 5545.70 %. [ABSTRACT FROM AUTHOR]