CNFET-Based Ultra-Low-Power Dual-VDD Ternary Half Adder.

This paper proposes a carbon nanotube FET (CNFET)-based ultra-low-power dual- V DD ternary half adder (HA) circuit. The proposed design utilizes both the available ternary power supply voltages ( V DD & V DD / 2 ) and prevents direct path between the power supplies and ground, thus significantly reducing the power dissipation as compared to the conventional designs. The performance of the proposed CNFET dual- V DD HA has been compared with the same circuit implemented with 45 nm MOSFETs and also with other CNFET-based state-of-the-art HA designs proposed in the literature. The proposed HA consumes merely 86 nW of power which is significantly lesser (66–90% lower) than the power required by other ternary HA designs, and also exhibits 69–91% lower delays. The overall PDP of the proposed HA circuit is merely 4–11% of the PDP of corresponding CMOS ternary HA and other benchmarked CNFET HA designs. [ABSTRACT FROM AUTHOR]