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Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films.
- Source :
-
Applied Physics Letters . 11/22/2004, Vol. 85 Issue 21, p4890-4892. 3p. 2 Diagrams, 3 Graphs. - Publication Year :
- 2004
-
Abstract
- The effect of growth temperature on morphology, structure, and photoluminescence (PL) of Eu-doped GaN (GaN:Eu) films grown by magnetron sputtering, and the relationships of growth-temperature-structure-PL were investigated by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and PL. The films grown at room temperature (RT), 573 K, and 773 K are composed of random crystalline grains, c-oriented GaN nanorods with lots of stacking faults, and well-crystalline c-oriented GaN, respectively. The characteristic emission lines of the Eu3+ were observed in the PL spectra at room temperature for the 573-K-grown and 773-K-grown films, while no emission line for the RT-grown film. The PL intensity from the 773-K-grown film is much stronger than that from the 573-K-grown film. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 85
- Issue :
- 21
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 15155577
- Full Text :
- https://doi.org/10.1063/1.1825619