Back to Search
Start Over
Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology.
- Source :
-
Semiconductor Science & Technology . Aug2021, Vol. 36 Issue 8, p1-5. 5p. - Publication Year :
- 2021
-
Abstract
- In the past, gate turn-off (GTO) thyristors were commonly used to either increase the length of the drift region or reduce the doping concentration to increase high-voltage and high-power applications. However, this results in an on-resistance (Ron) increase. In this study, we applied a supercritical fluid (SCF) treatment to devices which has the advantage of high permeability and low-temperature processing to passivate SiC-GTO bulk defects. After the proposed defect passivation, the breakdown voltage has been improved by 8% without increasing on-state resistance. In addition, the leakage current has also been suppressed more than 30% in average. This study also uses electrical analysis to understand the characteristics of the devices after SCF treatment, and then discusses the passivation mechanism of materials of the devices from this treatment. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 36
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 151627697
- Full Text :
- https://doi.org/10.1088/1361-6641/ac0b9b