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Low-Voltage and High-Gain Ultraviolet Detector Based on 4H-SiC n-p-n Bipolar Phototransistor.
- Source :
-
IEEE Transactions on Electron Devices . May2021, Vol. 68 Issue 5, p2342-2346. 5p. - Publication Year :
- 2021
-
Abstract
- A two-terminal 4H-SiC n-p-n bipolar phototransistor detector (PTD) with high gain is demonstrated. It was fabricated using the 4H-SiC epitaxial wafer grown by high-temperature chemical vapor deposition. The PTD shows a large photocurrent and responsivity enhancement over the conventional 4H-SiC p-i-n photodetector (PD). These enhancement effects are owing to the internal gain of the bipolar transistor. The detector shows a high optical gain of ~ 1450 at 360 nm and has a linear response to the ultraviolet (UV) light in the wide light intensity range of 0.7– 700 μW/cm2 at a low operating voltage of 3 V. The PTD can respond to the UV light from 220 to 340 nm and the peak responsivity is ~ 125A/W at 275 nm. This work is significant for developing high-performance SiC-based bipolar phototransistors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 68
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 151778174
- Full Text :
- https://doi.org/10.1109/TED.2021.3068243