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Impact of Random Phase Distribution in Ferroelectric Transistors-Based 3-D NAND Architecture on In-Memory Computing.
- Source :
-
IEEE Transactions on Electron Devices . May2021, Vol. 68 Issue 5, p2543-2548. 6p. - Publication Year :
- 2021
-
Abstract
- Three-dimensional NAND architecture (3-D NAND) based on ferroelectric field-effect transistors (FeFETs) is explored for in-memory computing. In ferroelectric Hafnia-based polycrystalline thin film, which is deposited on the gate of the FeFETs, the monoclinic (M), and orthorhombic (O) phases coexist. These two phases of positional distribution introduce a read-out current variation in the 3-D NAND of FeFETs. Herein, we employ TCAD simulations to quantify such variation and optimize bias conditions for improving the accuracy of in-memory computing. Furthermore, the array-level impact of the phase variation on vector-matrix multiplication has been investigated using a 3-D netlist with SPICE simulations, indicating sufficient read-out accuracy possible for analog-to-digital conversion. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 68
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 151778181
- Full Text :
- https://doi.org/10.1109/TED.2021.3068086