An Analytical Method for Parameter Extraction in Oxide Semiconductor Field-Effect Transistors.

This article presents an analytical method for parameter extraction in oxide semiconductor field-effect transistors (OS FETs), including threshold voltage (VT), effective channel length (Leff), source–drain series resistance (RSD), and intrinsic effective mobility (μint). An analytical expression of effective mobility (μeff) is implemented with the consideration of percolation conduction and RSD effects. This method relies on the concept of Y-function method and the channel length dependent measurement. The extraction results are compared to those from the combination of transfer length method (TLM). It has been shown that a better accuracy of the extracted parameters is achieved with the proposed method. Furthermore, transfer characteristics are resimulated based on the extracted parameters, in which a good match between measurement and simulation is obtained. [ABSTRACT FROM AUTHOR]