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Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications.
- Source :
-
IEEE Transactions on Electron Devices . Jun2021, Vol. 68 Issue 6, p2673-2679. 7p. - Publication Year :
- 2021
-
Abstract
- This article demonstrates the integrated comparators, hysteresis comparators, and sawtooth generators based on aluminum–gallium–nitride/gallium–nitride (AlGaN/GaN) metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). The integrated circuits (ICs) exhibit thermal stability from 25 °C to 250 °C in both static and transient performances. The threshold voltage (Vth) in depletion (D)-mode MIS-HEMT is modulated from −8.9 to −2.4 V to optimize the performance of integrated comparator circuits. The comparator can realize a large and stable comparison range of 3–9 V and a high voltage swing of 9.1 V, while the hysteresis comparator exhibits a good noise-immunity ability and stable hysteresis output. The sawtooth generator with the hysteresis comparator features a high amplitude (6.1 V) sawtooth signal at 500 kHz to realize a compact structure applicable to the high-voltage mixed-signal circuits. These results show the feasibility of MIS-HEMT monolithic comparator circuits in conversion systems. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 68
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 151778267
- Full Text :
- https://doi.org/10.1109/TED.2021.3075425