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Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs.
- Source :
-
IEEE Transactions on Electron Devices . Jul2021, Vol. 68 Issue 7, p3325-3332. 8p. - Publication Year :
- 2021
-
Abstract
- In this article, we separately investigate the role of electric field and device self-heating (SHE) in enhancing the charge emission process from Fe-related buffer traps (0.52 eV from Ec) in AlGaN/GaN high electron mobility transistors (HEMTs). The experimental analysis was performed by means of drain current transient (DCT) measurements for either: 1) different dissipated power (PD,steady) at constant drain-to-source bias (VDS,steady) or 2) constant PD,steady at different VDS,steady’s. We found that: 1) an increase in PD,steady yields an acceleration in the thermally activated emission process, consistently with the temperature rise induced by SHE and 2) on the other hand, the field-effect turned out to be negligible within the investigated voltage range, indicating the absence of the Poole–Frenkel effect (PFE). A qualitative analysis based on the electric field values obtained by numerical simulations is then presented to support the interpretation and conclusions. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 68
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 151778346
- Full Text :
- https://doi.org/10.1109/TED.2021.3081613