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Ultrathin Mg0.05Sn0.95Ox-Based Thin-Film Transistor by Mist Chemical Vapor Deposition.
- Source :
-
IEEE Transactions on Electron Devices . Jul2021, Vol. 68 Issue 7, p3390-3395. 6p. - Publication Year :
- 2021
-
Abstract
- The 5-nm-thick Mg0.05Sn0.95Ox thin film deposited using mist chemical vapor deposition is used as a channel layer of the thin-film transistor (TFT). Mg0.05Sn0.95Ox improves the crystallinity, reduces the number of oxygen deficiencies, and enlarges the energy bandgap compared with SnO2. Mg0.05Sn0.95Ox-based TFT shows higher field-effect mobility (144.9 cm2V−1s−1), steeper subthreshold slope (134 mV/decade), and significant ON/OFF current ratio (>109) than the SnO2-based TFT. Owing to fewer oxygen-related defects, wide energy bandgaps, and stable Mg-O chemical bonding, the Mg0.05Sn0.95Ox-based TFT exhibits more stable electrical performance than the SnO2 TFT after negative bias illumination stress testing. These results suggest that Mg0.05Sn0.95Ox is a promising material for high electron mobility TFT applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 68
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 151778351
- Full Text :
- https://doi.org/10.1109/TED.2021.3082113