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Bufferless Epitaxial Growth of GaAs on Step-Free Ge (001) Mesa.
- Source :
-
Chinese Physics Letters . Jun2021, Vol. 38 Issue 6, p1-5. 5p. - Publication Year :
- 2021
-
Abstract
- GaAs/Ge heterostructures have been employed in various semiconductor devices such as solar cells, high-performance CMOS transistors, and III–V/IV heterogeneous optoelectronic devices. The performance of these devices is directly dependent on the material quality of the GaAs/Ge heterostructure, while the material quality of the epitaxial GaAs layer on the Ge is limited by issues such as the antiphase domain (APD), and stacking-fault pyramids (SFP). We investigate the epitaxial growth of high-quality GaAs on a Ge (001) mesa array, via molecular beam epitaxy. Following a systematic study of the Ge terrace via an in situ scanning tunneling microscope, an atomically step-free terrace on the Ge mesa measuring up to 5 × 5 μm2 is obtained, under optimized growth conditions. The step-free terrace has a single-phase c (4 × 2) surface reconstruction. The deposition of a high-quality GaAs layer with no APD and SFP is then achieved on this step-free Ge terrace. High-resolution transmission electron microscopy and electron channel contrast image characterizations reveal the defect-free growth of the GaAs layer on the step-free Ge mesa. Furthermore, InAs quantum dots on this GaAs/Ge mesa reveal photoluminescent intensity comparable to that achieved on a GaAs substrate, which further confirms the high quality of the GaAs layer on Ge. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 38
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 151789266
- Full Text :
- https://doi.org/10.1088/0256-307X/38/6/068101