Cite
Effect of Temperature on Electrical Behavior of 4H-SiC and 6H-SiC Double-Gate (DG) MOSFETs in 130nm Technology.
MLA
Hebali, Mourad, et al. “Effect of Temperature on Electrical Behavior of 4H-SiC and 6H-SiC Double-Gate (DG) MOSFETs in 130nm Technology.” Journal of Engineering Science & Technology Review, vol. 14, no. 2, Mar. 2021, pp. 18–22. EBSCOhost, https://doi.org/10.25103/jestr.142.03.
APA
Hebali, M., Bennaoum, M., Azzeddine, H. A., Benzohra, M., & Chalabi, D. (2021). Effect of Temperature on Electrical Behavior of 4H-SiC and 6H-SiC Double-Gate (DG) MOSFETs in 130nm Technology. Journal of Engineering Science & Technology Review, 14(2), 18–22. https://doi.org/10.25103/jestr.142.03
Chicago
Hebali, Mourad, Menaouer Bennaoum, Hocine Abdelhak Azzeddine, Mohammed Benzohra, and Djilali Chalabi. 2021. “Effect of Temperature on Electrical Behavior of 4H-SiC and 6H-SiC Double-Gate (DG) MOSFETs in 130nm Technology.” Journal of Engineering Science & Technology Review 14 (2): 18–22. doi:10.25103/jestr.142.03.