High Mobility Organic Lasing Semiconductor with Crystallization‐Enhanced Emission for Light‐Emitting Transistors.

The development of high mobility organic laser semiconductors with strong emission is of great scientific and technical importance, but challenging. Herein, we present a high mobility organic laser semiconductor, 2,7‐diphenyl‐9H‐fluorene (LD‐1) showing unique crystallization‐enhanced emission guided by elaborately modulating its crystal growth process. The obtained one‐dimensional nanowires of LD‐1 show outstanding integrated properties including: high absolute photoluminescence quantum yield (PLQY) approaching 80 %, high charge carrier mobility of 0.08 cm2 V−1 s−1, Fabry‐Perot lasing characters with a low threshold of 86 μJ cm−2 and a high‐quality factor of ≈2400. Furthermore, electrically induced emission was obtained from an individual LD‐1 crystal nanowire‐based light‐emitting transistor due to the recombination of holes and electrons simultaneously injected into the nanowire, which provides a good platform for the study of electrically pumped organic lasers and other related ultrasmall integrated electrical‐driven photonic devices. [ABSTRACT FROM AUTHOR]