Cite
Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED.
MLA
Samsudin, Muhammad Esmed Alif, et al. “Effect of Nucleation Layer Thickness on Reducing Dislocation Density in AlN Layer for AlGaN-Based UVC LED.” Microelectronics International, vol. 38, no. 3, July 2021, pp. 113–18. EBSCOhost, https://doi.org/10.1108/MI-02-2021-0012.
APA
Samsudin, M. E. A., Yusuf, Y., Zainal, N., Abu Bakar, A. S., Zollner, C., Iza, M., & DenBaars, S. P. (2021). Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED. Microelectronics International, 38(3), 113–118. https://doi.org/10.1108/MI-02-2021-0012
Chicago
Samsudin, Muhammad Esmed Alif, Yusnizam Yusuf, Norzaini Zainal, Ahmad Shuhaimi Abu Bakar, Christian Zollner, Michael Iza, and Steven P. DenBaars. 2021. “Effect of Nucleation Layer Thickness on Reducing Dislocation Density in AlN Layer for AlGaN-Based UVC LED.” Microelectronics International 38 (3): 113–18. doi:10.1108/MI-02-2021-0012.