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Dislocation Etching Morphology on the A Plane of Sapphire Crystal.
- Source :
-
Crystal Research & Technology . Sep2021, Vol. 56 Issue 9, p1-6. 6p. - Publication Year :
- 2021
-
Abstract
- In this work, the dislocation etching pit morphology and etching kinetics on the A‐{112¯0} plane of sapphire crystal (α‐Al2O3) are studied experimentally. The results show that the etch pit exhibits a subrhombic 3D morphology, which is consistent with the atom arrangement symmetry of the A plane. Further analysis shows that the two adjacent sides of the rhombic etch pits correspond to the directions [33¯01¯] and [33¯02], respectively; both of them are in the atomic close‐packing direction of A plane. The etch pits are controlled by a chemical reaction between Al2O3 and potassium hydroxide (KOH) with the reaction activation energy of 51.7 kJ mol−1, which is developed in a manner of kinematic wave by the step moving with a constant speed. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ETCHING
*SAPPHIRES
*POTASSIUM hydroxide
*CRYSTALS
*ACTIVATION energy
Subjects
Details
- Language :
- English
- ISSN :
- 02321300
- Volume :
- 56
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Crystal Research & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 152422427
- Full Text :
- https://doi.org/10.1002/crat.202100022