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Interface modification in Co/Ge bilayer using swift heavy ions.

Authors :
Som, T.
Satpati, B.
Satyam, P. V.
Kabiraj, D.
Gupta, Ajay
Mishra, N. C.
Source :
Journal of Applied Physics. 12/15/2004, Vol. 96 Issue 12, p7141-7146. 6p. 2 Black and White Photographs, 1 Graph.
Publication Year :
2004

Abstract

We report on interface modification in Co/Ge bilayer system using 100 MeV Au7+ ion irradiation at different temperatures and fluences. Irradiation induced changes occurring across the Co/Ge interface are studied by Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy. Although Au irradiation at low temperature does not show any interface mixing, formation of a thin (∼3–4 nm) Co–Ge alloy layer has been observed after room temperature irradiation to a fluence of 1×1014 ions cm-2. This mixing has been discussed on the basis of synergetic effects of nuclear and electronic energy loss processes in the bilayer system. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
96
Issue :
12
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
15244322
Full Text :
https://doi.org/10.1063/1.1812819