Recrystallization of Cu(In,Ga)Se2 Semiconductor Thin Films via InCl3 Treatment.

• InCl 3 used to recrystallize Cu(In,Ga)Se 2 films at low temperature. • Large grains are obtained for temperature as low as 450 °C. • The films become overall indium rich with an indium rich surface. • The alkali profile is modified. One of the key challenges to promote the economic viability of Cu(In,Ga)Se 2 (CIGS) solar cells is the multi-stage co-evaporation process required to make a high quality absorber layer. One phenomenon of interest is dynamic recrystallization using a fluxing agent. While these techniques have significantly improved material systems like CdTe, their impact on other nonmetallic systems are relatively unexplored. In this paper, we demonstrate that InCl 3 can be used effectively to recrystallize CIGS for temperature as low as 450 °C, but that it also induces a modification of the surface composition. Analyses, notably via glancing incidence X-ray diffraction and secondary ion mass spectrometry, show an indium enriched surface as well as a modified alkali profile. [ABSTRACT FROM AUTHOR]