Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor.

Two-dimensional (2D) metal-oxidesemiconductor (CMOS) field-effect-transistors (FETs) with ferroelectric semiconducting α-In 2 Se 3 as the channel can achieve logic, in-memory computing, and optoelectrical logic and non-volatile computing functionalities in a single device. [Display omitted] Exploring materials with multiple properties who can endow a simple device with integrated functionalities has attracted enormous attention in the microelectronic field. One reason is the imperious demand for processors with continuously higher performance and totally new architecture. Combining ferroelectric with semiconducting properties is a promising solution. Here, we show that logic, in-memory computing, and optoelectrical logic and non-volatile computing functionalities can be integrated into a single transistor with ferroelectric semiconducting α-In 2 Se 3 as the channel. Two-input AND, OR, and non-volatile NOR and NAND logic operations with current on/off ratios reaching up to five orders, good endurance (1000 operation cycles), and fast operating speed (10 μs) are realized. In addition, optoelectrical OR logic and non-volatile implication (IMP) operations, as well as ternary-input optoelectrical logic and in-memory computing functions are achieved by introducing light as an additional input signal. Our work highlights the potential of integrating complex logic functions and new-type computing into a simple device based on emerging ferroelectric semiconductors. [ABSTRACT FROM AUTHOR]