InAs triangular quantum wells grown on InP/SiO2/Si heterogeneous substrate for mid-infrared emission.

The properties of InAs/In 0.53 Ga 0.37 As triangular quantum wells (QWs) grown on an InP/SiO 2 /Si integrated substrate by ion-slicing technology are investigated. The material structure and growth quality are characterized by the X-ray diffraction (XRD) and transmission electron microscope measurements. The photoluminescence (PL) spectra at various temperatures are also analyzed. The PL peak wavelengths red-shift from 1.94 to 2.13 μm with the increase of temperature from 12.4 to 300 K. The experimental results of the QWs on InP/SiO 2 /Si substrate are found to be comparable with the performance of the same QWs grown on an InP substrate. The results are promising for future integration of Si with InP-based optical devices for the applications of light emission in mid-infrared wavelength range. [ABSTRACT FROM AUTHOR]