Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy.

A vertical GaN p+-n junction diode with an ideal breakdown voltage was grown by halide vapor phase epitaxy (HVPE). A steep p+-n interface was observed even with the use of the HVPE method. No Si-accumulating layer was formed at the p+-n interface because of the continuous HVPE growth from the n-type drift layer to the p-type layer. This method provides improved electrical properties compared with the regrowth of p-type GaN layers. The minimum ideality factor of approximately 1.6 was obtained. The breakdown voltage increased from 874 to 974 V with the increase in the temperature from 25 to 200 °C, which suggests that avalanche multiplication causes the breakdown. The temperature-dependent breakdown voltage was in good agreement with the breakdown voltage calculated using the ideal critical electric field. These results indicate that HVPE is promising for the fabrication of vertical GaN power devices. [ABSTRACT FROM AUTHOR]